Method of forming a self-cleaning film system

ABSTRACT

A method of forming a self-cleaning film system includes depositing a photocatalytic material onto a substrate to form a first layer. The method also includes disposing a photoresist onto the first layer and then exposing the photoresist to light so that the photoresist has a developed portion and an undeveloped portion. The method includes removing the undeveloped portion so that the developed portion protrudes from the first layer. After removing, the method includes depositing a perfluorocarbon siloxane polymer onto the first layer to surround and contact the developed portion. After depositing the perfluorocarbon siloxane polymer, the method includes removing the developed portion to thereby form the self-cleaning film system.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.15/429,577, now U.S. Pat. No. 10,052,622, filed on Feb. 10, 2017 andpublished on Aug. 17, 2017 as United States Patent ApplicationPublication No. 2017/0232430, entitled “Method of Forming aSelf-Cleaning Film System”, the entire disclosure of which isincorporated herein by reference. United States Patent ApplicationPublication No. 2017/0232430 claims priority from U.S. ProvisionalPatent Application No. 62/294,496, filed on Feb. 12, 2016 and entitled“Method of Forming a Self-Cleaning Film System”, the entire disclosureof which is incorporated herein by reference.

INTRODUCTION

The disclosure relates to a self-cleaning film system and to a method offorming the self-cleaning film system.

Devices, such as display systems, are often designed to be touched by anoperator. For example, a vehicle may include a display system thatpresents information to an operator via a touchscreen. Similarly, anautomated teller machine or kiosk may include a display system that isactivated by touch.

Other devices, such as cameras and eyeglasses, generally include a lenssurface which may be inadvertently touched by an operator during use.Further, other devices such as vehicles, windows, mirrors, appliances,cabinetry, furniture, cellular telephones, fingerprint scanners,sensors, copiers, medical instruments, and countertops may also includeone or more surfaces which may be touched by an operator. Therefore,during use, an operator may deposit fingerprints and/or oils onto suchdevices and surfaces.

SUMMARY

A method of forming a self-cleaning film system includes depositing aphotocatalytic material onto a substrate to form a first layer, anddisposing a photoresist onto the first layer. After disposing thephotoresist, the method includes exposing the photoresist to light sothat the photoresist has a developed portion and an undeveloped portion.The method also includes removing the undeveloped portion so that thedeveloped portion protrudes from the first layer. After removing, themethod includes depositing a perfluorocarbon siloxane polymer onto thefirst layer to surround and contact the developed portion. Afterdepositing the perfluorocarbon siloxane polymer, the method includesremoving the developed portion to thereby form the self-cleaning filmsystem.

In one aspect, removing the undeveloped portion may include covering aprotected portion of the first layer. In addition, removing theundeveloped portion may include not covering an unprotected portion ofthe first layer. In another aspect, the method may further include,after removing the undeveloped portion, removing the unprotectedportion. Removing the unprotected portion may include acid etching awaythe unprotected portion so that the protected portion remains andprojects from the substrate.

Depositing may include magnetron sputtering the photocatalytic materialonto the substrate. Further, depositing may include forming aself-aligned monolayer that is physically adsorbed and cross-linkedthrough a siloxane moiety. In addition, depositing may includechemically bonding the photocatalytic material to the substrate tosurround and abut the protected portion.

Disposing may include transferring a predetermined pattern onto thesubstrate.

Exposing may include developing the photoresist to transfer a patternonto the first layer.

Removing the undeveloped portion may include wiping the undevelopedportion with a solvent that is reactive with the photoresist. Further,removing the developed portion may include wiping the developed portionwith a solvent that is reactive with the photoresist.

The method may further include contacting the perfluorocarbon siloxanepolymer and squalene. In addition, the method may include oxidizing thesqualene. Further, the method may include vaporizing the squalene.

A method of forming a self-cleaning film system includes synthesizing atitanium dioxide nanoparticle siloxane, and mixing the titanium dioxidenanoparticle siloxane and a perfluorocarbon siloxane polymer to form asolution. The method also includes applying the solution to a substrateto thereby form the self-cleaning film system.

In one aspect, the perfluorocarbon siloxane polymer has a backbone, andsynthesizing includes selecting a thiol to link the titanium dioxidenanoparticle siloxane to the backbone.

The method may further include, after applying, reapplying the solution.

In another aspect, the method may include contacting the self-cleaningfilm system and squalene. The method may further include oxidizing andvaporizing the squalene.

The above features and advantages and other features and advantages ofthe present disclosure are readily apparent from the following detaileddescription of the best modes for carrying out the disclosure when takenin connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of a front view of a self-cleaningfilm system.

FIG. 2 is a schematic illustration of a magnified, perspective view ofthe self-cleaning film system of FIG. 1.

FIG. 3 is a schematic illustration of one embodiment of a method offorming the self-cleaning film system of FIGS. 1 and 2.

FIG. 4 is a schematic illustration of a second embodiment of a method offorming the self-cleaning film system of FIGS. 1 and 2.

FIG. 5 is a schematic illustration of a third embodiment of a method offorming the self-cleaning film system of FIGS. 1 and 2.

FIG. 6 is a schematic illustration of a fourth embodiment of a method offorming the self-cleaning film system of FIGS. 1 and 2.

DETAILED DESCRIPTION

Referring to the Figures, wherein like reference numerals refer to likeelements, a self-cleaning film system 10, 110, 210, 310 is showngenerally in FIG. 1. The self-cleaning film system 10, 110, 210, 310 maybe suitable for applications in which an operator may touch and depositfingerprints, oils, and/or other organic or carbon-based contaminants orpathogens onto a screen, lens, or surface. More specifically, theself-cleaning film system 10, 110, 210, 310 may be useful forapplications requiring a clean, substantially oil- or fingerprint-freescreen, lens, or surface. That is, the self-cleaning film system 10 maybe useful for removing fingerprints and other organic contaminants fromsuch screens, lenses, or surfaces.

For example, the self-cleaning film system 10, 110, 210, 310 may beuseful for automotive applications such as in-dash navigation systemswhich include a touchscreen, vehicle cameras which include a lens,vehicle mirrors, and vehicle interior surfaces. Alternatively, theself-cleaning film system 10, 110, 210, 310 may be useful fornon-automotive applications such as, but not limited to, consumerelectronics, cellular telephones, eyewear, personal protectiveequipment, appliances, furniture, kiosks, fingerprint scanners, medicaldevices, sensors, aircraft, and industrial vehicles.

Referring now to FIG. 2, the self-cleaning film system 10, 110, 210, 310may be applied to a substrate 12. The substrate 12 may be formed from avitreous, transparent material suitable for refracting visible light.For example, in one embodiment, the substrate 12 may be formed fromsilicon dioxide. In another example, the substrate 12 may be formed froma polycarbonate or other plastic. Alternatively, as best shown in FIG.2, the substrate 12 may be formed from an anti-reflective coatingcomprising alternating layers 14, 16 of silicon dioxide and titaniumdioxide. That is, the substrate 12 may be an anti-reflective film orcoating. In general, the substrate 12 may be configured as, by way ofnon-limiting examples, a screen of a display system, a lens ofeyeglasses or goggles, a visor of a helmet, a surface of a refrigerator,a face of a cabinet, a door panel of a vehicle, a touchscreen of akiosk, or as any other surface or device that may be touched by anoperator.

The self-cleaning film system 10, 110, 210, 310 also includes a film 18to be disposed on the substrate 12, e.g., chemically bonded to thesubstrate 12 as set forth in more detail below. The film 10, 110, 210,310 may be configured to cover and protect the substrate 12 fromfingerprints, oils, and organic contaminants. That is, the film 18 maybe configured to cause fingerprints, oils, and organic contaminantsdeposited on the film 18 to vanish, disappear, or vaporize so as tomaintain a clean substrate 12 that is capable of displaying crisp imagesor reflections.

More specifically, as described with reference to FIG. 2, the film 18may have a first surface 20 and a second surface 22 spaced opposite thefirst surface 20. The second surface 22 may abut the substrate 12, andthe first surface 20 may be substantially free from squalene, organicmaterial, and/or other oils of fatty acids. As used herein, theterminology squalene refers to an organic compound having 30 carbonatoms and represented by the International Union of Pure and AppliedChemistry name(6E,10E,14E,18E)-2,6,10,15,19,23-hexamethyltetracosa-2,6,10,14,18,22-hexaene.In general, the film 18 may be characterized as a thin film and may havea thickness 24 of, for example, from 10 μm to 150 μm.

The substrate 12 also has a proximal surface 26 abutting the secondsurface 22 and a distal surface 28 spaced opposite the proximal surface26. Therefore, the substrate 12 and the film 18 are configured totransmit visible light through the proximal surface 26, the distalsurface 28, the first surface 20, and the second surface 22. Thesubstrate 12 also has a first edge 30 connecting the proximal surface 26and the distal surface 28, and a second edge 32 spaced opposite thefirst edge 30.

The film 18 may define a contact angle with water of greater than orequal to 115°, e.g., greater than 140°. For example, the film 18 maydefine a contact angle with water of greater than or equal to 150°. Assuch, water, oils, and contaminants may effectively bead on andtranslate across the first surface 20. Stated differently, water, oils,and contaminants may be mobile and effectively translate along the firstsurface 20.

Although not shown, the self-cleaning film system 10, 110, 210, 310 mayfurther include a light source disposed adjacent the first edge 30 andconfigured for emitting electromagnetic radiation. For example, thelight source may be an ultraviolet light-emitting diode and theelectromagnetic radiation may have a wavelength of from 400 nm to 100nm. Alternatively, the light source may be an incandescent bulb or avisible light-emitting diode and the electromagnetic radiation may havea wavelength of from 740 nm to 380 nm.

Referring again to FIG. 2, the film 18 is formed from a self-cleaningcoating composition. That is, the film 18 may mitigate fingerprint andoil deposition, i.e., self-clean. The self-cleaning coating compositionincludes a photocatalytic material 34 (FIGS. 3-5) and a perfluorocarbonsiloxane polymer 36 (FIGS. 3-5), as set forth in more detail below.

The photocatalytic material 34 may provide the film 18 withself-cleaning capability. That is, the photocatalytic material 34 mayoxidize and/or vaporize any organic material, e.g., squalene, present onthe first surface 20 of the film 18, as set forth in more detail below.In particular, the photocatalytic material 34 may be a light-activatedphotocatalyst upon exposure to, for example, visible or ultravioletlight.

Suitable photocatalytic materials 34 may include, but are not limitedto, photo-oxidative semiconductors, semiconducting oxides, doped metaloxides, heterojunction materials, and combinations thereof.

In one embodiment, the photocatalytic material 34 may be titaniumdioxide and may be present in a rutile form. Alternatively, thephotocatalytic material 34 may be titanium dioxide and may be present inan anatase form, which may exhibit a comparatively higher photocatalyticactivity than the rutile form. In other embodiments, the photocatalyticmaterial 34 may be titanium dioxide and may be present as a combinationof the rutile form and the anatase form. Further, the photocatalyticmaterial 34 may be doped to form a functionalized photocatalyticmaterial, e.g., functionalized titanium dioxide. For example, thefunctionalized photocatalytic material may be doped with a metal suchas, but not limited to, silver, chromium, cobalt, copper, vanadium,iron, silver, platinum, molybdenum, lanthanum, niobium, and combinationsthereof. Alternatively, the functionalized photocatalytic material maybe doped with a non-metal such as, but not limited to, nitrogen, sulfur,carbon, boron, potassium, iodine, fluorine, and combinations thereof.

The photocatalytic material 34 may be characterized as a nanoparticleand may have an average diameter measureable on a nanometer scale.Alternatively, the photocatalytic material 34 may be characterized as aparticle and may have an average diameter measureable on a micrometerscale. Generally, the photocatalytic material 34 may be present in theself-cleaning coating composition or film 18 in an amount of from about2 parts by volume to about 35 parts by volume based on 100 parts byvolume of the film 18.

In other non-limiting embodiments, the photocatalytic material 34 mayinclude a semiconducting oxide such as, but not limited to, zinc oxide,bismuth, tin oxide, and combinations thereof. The semiconducting oxidemay be selected to have a band gap separation suitable for aphotocatalytic reaction, as set forth in more detail below.

Referring now to FIGS. 3-5, the self-cleaning coating composition andfilm 18 include a perfluorocarbon siloxane polymer 36. As best shown inFIG. 3, the perfluorocarbon siloxane polymer 36 may form a majority ofthe film 18 and may be characterized as a monolayer field. As usedherein, the terminology monolayer refers to a layer having a thickness24 (FIG. 2) of one molecule. That is, the monolayer may be one moleculethick and may be characterized as a thin layer. In one embodiment, theperfluorocarbon siloxane polymer is a perfluorinated organosiloxane. Forexample, the perfluorocarbon siloxane polymer may be apolytetrafluoroethylene (PTFE) siloxane polymer.

Referring now to FIG. 3, a method 50 of forming the self-cleaning filmsystem 10 includes depositing 38 the perfluorocarbon siloxane polymer 36onto the substrate 12 to form a first layer 40. The perfluorocarbonsiloxane polymer 36 may be deposited or coated onto the substrate 12 inany suitable manner. By way of non-limiting examples, depositing 38 mayinclude chemical vapor depositing (CVD), physical vapor deposition(PVD), atomic layer deposition (ALD), dipping, wiping, spraying,meniscus coating, wet coating, combinations thereof, and the like.Depositing 38 may include forming a self-aligned monolayer that isphysically adsorbed, i.e., physisorbed, and cross-linked withneighboring molecules through a siloxane moiety.

The method 50 also includes removing 44 a plurality of portions 46 ofthe first layer 40 to define a plurality of cavities 42 in the firstlayer 40 and form a plurality of projections 48 that protrude from thesubstrate 12. The plurality of portions 46 may be removed by anysuitable manner. By way of non-limiting examples, removing 44 mayinclude ultraviolet photoablating through an optical mask or plasmaetching through a fine metal mask. For example, removing 44 may includeprojecting plasma or ions at the first layer 40 through a mask tothereby etch away the plurality of portions 46, define the plurality ofcavities 42, and form the plurality of projections 48.

The method 50 also includes depositing 52 the photocatalytic material 34onto the plurality of projections 48 and into the plurality of cavities42 to form a second layer 54. Depositing 38 may include chemicallybonding the photocatalytic material 34 to the substrate 12 within theplurality of cavities 42. The photocatalytic material 34 may bedeposited onto the plurality of projections 48 in any suitable manner.For example, the photocatalytic material, such as titanium dioxide, maybe deposited onto the plurality of projections 48 and into the pluralityof cavities 42 via magnetron sputtering. The magnetron sputtering, forexample, may be reactive using a titanium metal target or may be directdeposition from a ceramic titanium dioxide target.

Referring again to FIG. 3, the second layer 54 has a bonded portion 56disposed in the plurality of cavities 42 and in contact with thesubstrate 12, and a non-bonded portion 58 disposed on the plurality ofprojections 48 and spaced apart from the substrate 12. That is,nucleation of the photocatalytic material 34 and substrate-bonding andgrowth may be efficient in high-surface energy areas, i.e., theplurality of cavities 42 or areas without the perfluorocarbon siloxanepolymer 36 present, to form the bonded portion 56, and inefficient inlow-surface energy areas, i.e., the plurality of projections ornon-bonded portions 58 or areas which include the perfluorocarbonsiloxane polymer 36 projecting from the substrate 12, to form thenon-bonded portion 58.

The method 50 also includes, after depositing 52 the photocatalyticmaterial 34, removing 44 the non-bonded portion 58 to thereby form theself-cleaning film system 10. The non-bonded portion 58 may be removedin any suitable manner. By way of non-limiting examples, removing 44 mayinclude washing or wiping away the non-bonded portion 58.

The method 50 may further include, after removing 44 the non-bondedportion 58, removing the plurality of projections 48. For example, theplurality of projections 48 may be removed during use due to wear of theself-cleaning film system 10. However, after removing 44 the pluralityof projections 48, the method 50 may include redepositing theperfluorocarbon siloxane polymer 36. The perfluorocarbon siloxanepolymer 36 may be redeposited in any suitable manner. By way ofnon-limiting examples, redepositing may include wiping theperfluorocarbon siloxane polymer 36 onto the substrate 12 so that theperfluorocarbon siloxane polymer 36 contacts the bonded portion 56.

The method 50 may further include contacting the bonded portion 56 andsqualene. That is, contacting may include touching the bonded portion 56such that an operator deposits fingerprints, squalene, organic matter,and/or oils onto the first surface 20 (FIG. 2). Oils may include oils offatty acids and may be synthesized naturally and applied to the bondedportion 56 as the operator touches the bonded portion 56, or may beapplied to the bonded portion 56 artificially such as by spraying orcoating.

Contact between the squalene, the photocatalytic material 34 which isexposed to electromagnetic radiation emitted by a light source having awavelength of less than 357 nm, and water may initiate formation ofradicals. The radicals may then react with hydrocarbon debris. Morespecifically, the photocatalytic material may be a photocatalyst such astitanium dioxide. A photocatalytic reaction may create a strongoxidation agent and breakdown the organic matter, e.g., squalene, to lowchain hydrocarbon to carbon dioxide and water in the presence of thephotocatalyst, i.e., the photocatalytic material 34; electromagneticradiation, e.g., ultraviolet light; and water, e.g., humidity fromambient conditions. As such, the photocatalytic material 34 may not beconsumed by the catalytic reaction, but may instead only accelerate thephotocatalytic reaction as a non-reactant.

In greater detail, when electromagnetic radiation having a desiredwavelength illuminates the photocatalytic material 34, an electron fromthe valence band of the photocatalytic material 34 may promote to theconduction band of the photocatalytic material 34, which in turn maycreate a hole in the valence band and an excess of negative charge orelectron in the conduction band. The hole may assist oxidation and theelectron may assist reduction. Generally, the hole may combine withwater to produce a hydroxyl radical (•OH). The hole may also reactdirectly with squalene or other organic material to increase an overallself-cleaning efficiency of the self-cleaning film system 10. Similarly,oxygen in the ambient environment surrounding the photocatalyticmaterial 34 may be reduced by the electron to form a superoxide ion(•O2—), which in turn may oxidize the organic material present on theself-cleaning film system 10. Therefore, the method 50 may includeoxidizing the squalene as well as other hydrocarbons.

In addition, the hole may become trapped before recombination with theelectron. For such situations, the photocatalytic material 34 may befunctionalized. For example, the method may include doping titaniumdioxide with, for example, palladium or ruthenium. The palladium orruthenium may act as an electrocatalyst and may increase a transfer ofelectrons to oxygen molecules, which may in turn lower the occurrence ofthe recombination of electrons and holes.

Further, organic material that is present on the perfluorocarbonsiloxane polymer 36 rather than in direct contact with thephotocatalytic material 34 may be in dynamic equilibrium with the firstsurface 20 (FIG. 2) and may diffuse toward a comparatively higher-energylocation on the film 18, i.e., the photocatalytic material 34.Therefore, the method 50 may also include diffusing the squalene alongthe film 18 from the perfluorocarbon siloxane polymer 36 to thephotocatalytic material 34. To improve such diffusion, the light sourcemay be tuned to emit electromagnetic radiation having a wavelength thatis tuned to a vibration resonance of the squalene and theperfluorocarbon siloxane polymer 36. Such tuning may enable the squaleneor fingerprint to wiggle or translate along the perfluorocarbon siloxanepolymer 36 to the photocatalytic material 34 where the squalene mayundergo the photocatalytic reaction described above. Alternatively oradditionally, the film 18 may also be heated, for example by infraredradiation, to further improve diffusion across the perfluorocarbonsiloxane polymer 36 towards the photocatalytic material 34.

As such, the method 50 may further include vaporizing the squalene. Morespecifically, once the squalene contacts the photocatalytic material 34,the squalene may be photolyzed into comparatively low vaporpressure-sized pieces or parts, which may vaporize off the film 18 andthereby remove the fingerprint or squalene from the film 18. Therefore,the self-cleaning film system 10 may be characterized as self-cleaning.That is, the film 18 may protect the substrate 12 by removing, e.g.,oxidizing and vaporizing the fingerprints, squalene, oils, and/ororganic material deposited by the touch of an operator. Consequently,the self-cleaning film system 10 and method 50 may provide excellentaesthetics, cleanliness, and readability for display systems, lenses,sensors, and surfaces.

Advantageously, the method 50 produces minimal waste and includes fewprocesses. Further, although the bonded portion 56 of the photocatalyticmaterial 34 may be substantially permanently attached the substrate 12,the perfluorocarbon siloxane polymer 36 may be reapplied after wear.

Referring now to FIG. 4, in a second embodiment, the method 150 offorming a self-cleaning film system 110 includes depositing 52 thephotocatalytic material 34 onto the substrate 12 to form the first layer140. The photocatalytic material 34 may be deposited onto the substrate12 in any suitable manner. By way of non-limiting examples, depositing52 may include atomic layer depositing (ALD), magnetron sputtering,electron beam evaporation, chemical vapor depositing (CVD), and thelike. The magnetron sputtering, for example, may be reactive using atitanium metal target or may be direct deposition from a ceramictitanium dioxide target.

The method 150 further includes disposing 60 a photoresist 62 onto thefirst layer 140. The terminology photoresist 62 refers to aphotosensitive resist that, when exposed to light, loses a resistance orsusceptibility to attack by an etchant or solvent. Therefore, thephotoresist 62 may be useful for forming a pattern on the first layer140. The photoresist 62 may be characterized as positive or negative.For example, the method 150 may include disposing 60 a positivephotoresist 62 onto the substrate 12 to transfer a predetermined patternonto the substrate 12.

After disposing 60 the photoresist 62, the method 150 also includesexposing 64 the photoresist 62 to light, e.g., visible light orultraviolet light via an optical mask or photomask, so that thephotoresist 62 has a developed portion 66 and an undeveloped portion 68.That is, exposing 64 may include a photolithographic process and maydevelop the photoresist 62 to transfer a desired pattern onto the firstlayer 140. For example, exposing 64 may include forming the developedportion 66 and the undeveloped portion 68 according to a desiredpattern, size, and density of the photocatalytic material 34 for thefinished self-cleaning film system 20.

As described with continued reference to FIG. 4, the method 150 alsoincludes removing 44 the undeveloped portion 68 so that the developedportion 66 protrudes from the first layer 140. The undeveloped portion68 may be removed in any suitable manner. By way of non-limitingexamples, removing 44 may include wiping the undeveloped portion 68 witha solvent that is reactive with the photoresist 62.

After removing 44, the method 150 includes depositing 38 theperfluorocarbon siloxane polymer 36 onto the first layer 140 to surroundand contact the developed portion 66. The perfluorocarbon siloxanepolymer 36 may be deposited or coated onto the first layer 140 in anysuitable manner. By way of non-limiting examples, depositing 38 mayinclude chemical vapor depositing (CVD), atomic layer deposition (ALD),dipping, wiping, spraying, meniscus coating, wet coating, combinationsthereof, and the like. Depositing 38 may include forming a self-alignedmonolayer that is physically adsorbed, i.e., physisorbed, andcross-linked with neighboring molecules through a siloxane moiety.

After depositing 38 the perfluorocarbon siloxane polymer 36, the method150 includes removing 44 the developed portion 66 to thereby form theself-cleaning film system 20. The developed portion 66 may be removed inany suitable manner. By way of non-limiting examples, removing 44 mayinclude wiping or washing the developed portion 66. For example,removing 44 may include wiping the developed portion 66 with a suitablesolvent that is reactive with the photoresist 62. For the method 150,the self-cleaning film system 20 may have a comparatively highreflectivity.

Referring to FIG. 5, in a third embodiment, a method 250 of forming theself-cleaning film system 210 includes depositing 52 the photocatalyticmaterial 34 onto the substrate 12 to form the first layer 140, as setforth above. The method 250 further includes disposing 60 thephotoresist 62 onto the first layer 140, as also set forth above. Afterdisposing 60 the photoresist 62, the method 250 also includes exposing64 the photoresist 62 to light, e.g., visible light or ultraviolet lightvia an optical mask or photomask, so that the photoresist 62 has adeveloped portion 66 and an undeveloped portion 68, as further set forthabove.

The method 250 also includes removing 44 the undeveloped portion 68 sothat the developed portion 66 protrudes from the first layer 140.Removing the undeveloped portion 68 may include covering a protectedportion 70 of the first layer 140. Further, removing the undevelopedportion 68 may include not covering an unprotected portion 72 of thefirst layer 140. The undeveloped portion 68 may be removed in anysuitable manner. By way of non-limiting examples, removing 44 mayinclude wiping the undeveloped portion 68 with a solvent that isreactive with the photoresist 62.

After removing 44 the undeveloped portion 68, the method 250 may includeremoving 44 the unprotected portion 72. For example, removing 44 mayinclude acid etching away the unprotected portion 72 of thephotocatalytic material 34 so that the protected portion 70 remains andprojects from the substrate 12.

After removing 44 the unprotected portion 72, the method 250 includesdepositing 38 the perfluorocarbon siloxane polymer 36 onto the substrate12 to surround and contact the protected portion 70. The perfluorocarbonsiloxane polymer 36 may be deposited or coated onto the substrate 12 inany suitable manner. By way of non-limiting examples, depositing 38 mayinclude chemical vapor depositing (CVD), atomic layer deposition (ALD),physical vapor deposition (PVD), dipping, wiping, spraying, meniscuscoating, wet coating, combinations thereof, and the like. Depositing 38may include forming a self-aligned monolayer that is physicallyadsorbed, i.e., physisorbed, and cross-linked with neighboring moleculesthrough a siloxane moiety. That is, depositing 38 may include chemicallybonding the photocatalytic material 34 to the substrate 12 to surroundand abut the protected portion 70.

After depositing 38 the perfluorocarbon siloxane polymer 36, the method250 includes removing 44 the developed portion 66 to thereby form theself-cleaning film system 210. The developed portion 66 may be removedin any suitable manner. By way of non-limiting examples, removing 44 mayinclude wiping or washing the developed portion 66. For example,removing 44 may include wiping the developed portion 66 with a suitablesolvent that is reactive with the photoresist 62. For the method 250,the self-cleaning film system 210 may have a comparatively lowerreflectivity because the photocatalytic material 34 may not spoil areflectance of the self-cleaning film system 210.

Referring now to FIG. 6, in a fourth embodiment, the method 350 offorming the self-cleaning film system 310 may include synthesizing 74 atitanium dioxide nanoparticle siloxane 76, and mixing 78 the titaniumdioxide nanoparticle siloxane 76 and the perfluorocarbon siloxanepolymer 36 to form a solution. Synthesizing 74 may include selecting amoiety to link the titanium dioxide to a backbone of the perfluorocarbonsiloxane polymer 36. For example, the moiety may be a thiol. Further,mixing 78 may include selecting a ratio or proportion of the titaniumdioxide nanoparticle siloxane 76 and the perfluorocarbon siloxanepolymer 36.

The method 350 may further include applying 80 the solution to thesubstrate 12 to thereby form the self-cleaning film system 310. Thesolution may be applied to the substrate via any suitable process. Byway of non-limiting examples, applying 80 may include codepositing,chemical vapor depositing (CVD), plasma CVD, atomic layer deposition(ALD), dipping, wiping, spraying, meniscus coating, sol-gel, wetcoating, combinations thereof, and the like. Applying 80 may includeroughening the photocatalytic material 34 to provide chunks or nodulesof the photocatalytic material 34. Such roughening may form a film 18having a raspberry-like or rough microstructure, which may contribute toan oleophobicity of the film 18 and self-cleaning film system 40.

In addition, the method 350 may also include, after applying 80,reapplying the perfluorocarbon siloxane polymer 36 to the substrate 12.For example, some of the originally-applied perfluorocarbon siloxanepolymer 36 may be removed during use due to wear of the self-cleaningfilm system 310. However, the method 350 may include reapplying theperfluorocarbon siloxane polymer 36. The perfluorocarbon siloxanepolymer 36 may be reapplied in any suitable manner. By way ofnon-limiting examples, reapplying may include wiping the perfluorocarbonsiloxane polymer 36 onto the substrate 12. As such, the method 350 issimple and cost-effective.

While the best modes for carrying out the disclosure have been describedin detail, those familiar with the art to which this disclosure relateswill recognize various alternative designs and embodiments forpracticing the disclosure within the scope of the appended claims.

What is claimed is:
 1. A method of forming a self-cleaning film system,the method comprising: depositing a photocatalytic material onto asubstrate to form a first layer; disposing a photoresist onto the firstlayer; after disposing the photoresist, exposing the photoresist tolight so that the photoresist has a developed portion and an undevelopedportion; removing the undeveloped portion so that the developed portionprotrudes from the first layer; after removing, depositing aperfluorocarbon siloxane polymer onto the first layer to surround andcontact the developed portion; and after depositing the perfluorocarbonsiloxane polymer, removing the developed portion to thereby form theself-cleaning film system.
 2. The method of claim 1, wherein removingthe undeveloped portion includes covering a protected portion of thefirst layer.
 3. The method of claim 2, wherein removing the undevelopedportion includes not covering an unprotected portion of the first layer.4. The method of claim 3, further including, after removing theundeveloped portion, removing the unprotected portion.
 5. The method ofclaim 4, wherein removing the unprotected portion includes acid etchingaway the unprotected portion so that the protected portion remains andprojects from the substrate.
 6. The method of claim 1, whereindepositing includes magnetron sputtering the photocatalytic materialonto the substrate.
 7. The method of claim 1, wherein disposing includestransferring a predetermined pattern onto the substrate.
 8. The methodof claim 1, wherein exposing includes developing the photoresist totransfer a pattern onto the first layer.
 9. The method of claim 1,wherein removing the undeveloped portion includes wiping the undevelopedportion with a solvent that is reactive with the photoresist.
 10. Themethod of claim 1, wherein depositing includes formed a self-alignedmonolayer that is physically adsorbed and cross-linked through asiloxane moiety.
 11. The method of claim 1, wherein depositing includeschemically bonding the photocatalytic material to the substrate tosurround and abut the protected portion.
 12. The method of claim 1,wherein removing the developed portion includes wiping the developedportion with a solvent that is reactive with the photoresist.
 13. Themethod of claim 1, further including contacting the perfluorocarbonsiloxane polymer and squalene.
 14. The method of claim 13, furtherincluding oxidizing the squalene.
 15. The method of claim 13, furtherincluding vaporizing the squalene.